參數(shù)資料
型號(hào)： 934026170127
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： 50 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝： PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁(yè)數(shù)： 10/13頁(yè)
文件大?。?/td> 93K
代理商： 934026170127
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D% = 100PD/PD(25 C) = f(Tmb)
Fig.6. Limiting continuous on-state load current.
I
L = f(Tmb); conditions: VIG = 5 V, VBG = 13 V
Fig.7. Typical on-state characteristics, T
j = 25 C.
I
L = f(VBL); parameter VBG; tp = 250 s
Fig.8. Typical on-state resistance, T
j = 25 C.
R
ON = f(VBG); conditions: IL = 10 A; tp = 300 s
Fig.9. Typical on-state resistance, t
p = 300 s.
R
ON = f(Tj); parameter VBG; condition IL = 2 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0
0.2
0.4
0.6
0.8
1
VBL / V
IL / A
BUK202-50Y
40
35
30
25
20
15
10
5
0
VBG / V =
13
5
6
7
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
RON / mOhm
BUK202-50Y
50
40
30
20
10
0
20
40
60
80
100
120
140
Tmb / C
IL / A
BUK202-50Y
20
10
0
-60
-20
20
60
100
140
180
Tj / C
RON / mOhm
BUK202-50Y
80
70
60
50
40
30
20
10
0
5 V
13 V
VBG =
typ.
April 1995
6
Rev 1.100
相關(guān)PDF資料
PDF描述
934026490115 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
934026520135 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
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934026630195 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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