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參數(shù)資料
| 型號： | 934052190118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934052190118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHB55N03T
Standard level FET
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
30
-
V
voltage
T
j = -55C
27
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 175C
1.0
-
V
T
j = -55C
-
4.4
I
DSS
Zero gate voltage drain current
V
DS = 30 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
0.02
1
A
T
j = 175C
-
20
A
±V
(BR)GSS
Gate source breakdown voltage I
G = ±1 mA;
16
-
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
15
18
m
resistance
T
j = 175C
-
33.5
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 25 A
7
15
-
S
Q
g(tot)
Total gate charge
I
D = 55 A; VDD = 24 V; VGS = 10 V
-
29.5
-
nC
Q
gs
Gate-source charge
-
4.5
-
nC
Q
gd
Gate-drain (Miller) charge
-
14
-
nC
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1000
-
pF
C
oss
Output capacitance
-
390
-
pF
C
rss
Feedback capacitance
-
180
-
pF
t
d on
Turn-on delay time
V
DD = 15 V; ID = 25 A;
-
15
20
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 5
-
2235ns
t
d off
Turn-off delay time
Resistive load
-
30
45
ns
t
f
Turn-off fall time
-
18
25
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead solder
-
4.5
-
nH
point to centre of die
L
s
Internal source inductance
Measured from source lead solder
-
7.5
-
nH
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
55
A
current
I
DRM
Pulsed reverse drain current
-
220
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 55 A; VGS = 0 V
-
1.0
-
t
rr
Reverse recovery time
I
F = 55 A; -dIF/dt = 100 A/s;
-
70
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 25 V
-
0.1
-
C
December 1997
2
Rev 1.200
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