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參數(shù)資料
| 型號： | 934052190118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934052190118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHB55N03T
Standard level FET
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
D =
tp
T
P
t
D
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
02468
10
0
20
40
60
80
BUK7518-30
VDS / V
ID / A
VGS / V =
4
4.5
5
5.5
6
6.5
8
12
10
1
10
100
1
10
100
1000
7518-30
VDS / V
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDS(ON)
= VDS
/ ID
0
20
406080
100
0
7518-30
ID / A
RDS(ON) / mOhm
10
20
30
40
VGS / V =
12
10
8
6.5
6
5.5
December 1997
4
Rev 1.200
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