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參數(shù)資料
| 型號： | 934052190118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 934052190118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHB55N03T
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 55 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 28 A
Fig.16. Avalanche energy test circuit.
Fig.17. Switching test circuit.
0
5
10
15
20
25
30
0
2
4
6
8
10
7518-30
QG / nC
VGS / V
VDS / V = 6
24
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
0.5
1
1.5
2
0
20
40
60
80
7518-30
VSDS / V
IF / A
Tj / C = 175
25
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
December 1997
6
Rev 1.200
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