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參數(shù)資料
| 型號(hào)： | 934054090118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934054090118 |
2002 Jul 09
3
Philips Semiconductors
Product specication
Complementary enhancement mode
MOS transistors
PHC2300
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Ts is the temperature at the soldering point of the drain leads.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the same
time).
4. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient
to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient
to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with
an Rth a-tp (ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per FET
VDS
drain-source voltage (DC)
N-channel
300
V
P-channel
300
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Ts =80 °C; note 1
N-channel
340
mA
P-channel
235
mA
IDM
peak drain current
note 2
N-channel
1.4
A
P-channel
0.9
A
Ptot
total power dissipation
Ts =80 °C; note 3
1.6
W
Tamb =25 °C; note 4
1.8
W
Tamb =25 °C; note 5
0.9
W
Tamb =25 °C; note 6
1.2
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
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