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參數(shù)資料
| 型號(hào)： | 934054090118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 934054090118 |
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2002 Jul 09
2
Philips Semiconductors
Product specication
Complementary enhancement mode
MOS transistors
PHC2300
FEATURES
High-speed switching
No secondary breakdown.
APPLICATIONS
Universal line interface in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
PINNING - SOT96-1 (SO8)
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1s1
source 1
2g1
gate 1
3s2
source 2
4g2
gate 2
5d2
drain 2
6d2
drain 2
7d1
drain 1
8d1
drain 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM118
1
4
5
8
s1
d1 d1
d2 d2
g1
s2
g2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per FET
VDS
drain-source voltage (DC)
N-channel
300
V
P-channel
300
V
VGS
gate-source voltage (DC)
±20
V
VGSth
gate-source threshold voltage
V
N-channel
VDS =VGS; ID =1mA
0.8
2
V
P-channel
VDS =VGS; ID = 1mA
0.8
2V
ID
drain current (DC)
Ts =80 °C
N-channel
340
mA
P-channel
235
mA
RDSon
drain-source on-state resistance
N-channel
VGS = 10 V; ID = 170 mA
6
P-channel
VGS = 10 V; ID = 115 mA
17
Ptot
total power dissipation
Ts =80 °C
1.6
W
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