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參數(shù)資料
| 型號(hào)： | 934054090118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934054090118 |
2002 Jul 09
10
Philips Semiconductors
Product specication
Complementary enhancement mode
MOS transistors
PHC2300
Fig.16 Source-drain current as a function of
source-drain diode forward voltage;
N-channel typical values.
VGD =0V.
handbook, halfpage
01
0.5
0
0.1
0.2
0.3
0.4
ISD
(A)
VSD (V)
0.2
0.4
0.6
0.8
MDA238
Fig.17 Source-drain current as a function of
source-drain diode forward voltage;
P-channel typical values.
VGD =0V.
handbook, halfpage
0
0.4
0.8
1.2
0.5
0
0.4
0.3
0.2
0.1
MDA239
ISD
(A)
VSD (V)
handbook, halfpage
10
0
2
VGS (V)
RDSon
(
)
468
102
10
1
MLD846
(1)
(2)
(3)
(4)
(5)
Fig.18 Drain-source on-state resistance as a
function of gate-source voltage; N-channel
typical values.
VDS ≥ ID × RDSon; Tamb =25 °C; tp = 300 s; δ =0.
(1) ID =10mA.
(2) ID =20mA.
(3) ID =50mA.
(4) ID = 100 mA.
(5) ID = 200 mA.
Fig.19 Drain-source on-state resistance as a
function of gate-source voltage; P-channel
typical values.
handbook, halfpage
10
0
2
4
6
8
102
10
1
MDA233
RDSon
(
)
VGS (V)
(1)
(2)
(3)
(4)
(5)
VDS ≥ ID × RDSon; Tamb =25 °C; tp = 300 s; δ =0.
(1) ID = 10 mA.
(2) ID = 20 mA.
(3) ID = 50 mA.
(4) ID = 100 mA.
(5) ID = 200 mA.
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