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參數資料
| 型號： | 934054090118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數： | 16/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934054090118 |
2002 Jul 09
9
Philips Semiconductors
Product specication
Complementary enhancement mode
MOS transistors
PHC2300
handbook, halfpage
05
25
200
150
50
0
100
10
VDS (V)
C
(pF)
15
20
MLD843
Crss
Coss
Ciss
Fig.12 Capacitance as a function of drain-source
voltage; N-channel typical values.
f = 1 MHz; Tamb =25 °C.
Fig.13 Capacitance as a function of drain-source
voltage; P-channel typical values.
f = 1 MHz; Tamb =25 °C.
handbook, halfpage
0
120
160
80
40
0
5
10
25
20
15
MDA236
C
(pF)
VDS (V)
Crss
Ciss
Coss
handbook, halfpage
0
(1)
(2)
1560
QG (pC)
VGS
(V)
3120
6240
12
0
4
8
4680
MLD844
VDS
(V)
50
37.5
12.5
0
25
Fig.14 Gate-source voltage and drain-source
voltage as a function of total gate charge;
N-channel typical values.
VDD = 50 V; ID = 170 mA; Tamb =25 °C.
(1) VDS.
(2) VGS.
handbook, halfpage
0
(1)
(2)
535
QG (pC)
VGS
(V)
1070
2140
12
0
4
8
1605
MLD845
VDS
(V)
50
37.5
12.5
0
25
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
VDD = 50 V; ID = 115 mA; Tamb =25 °C.
(1) VDS.
(2) VGS.
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