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| 型號(hào)： | 934054090118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934054090118 |
2002 Jul 09
5
Philips Semiconductors
Product specication
Complementary enhancement mode
MOS transistors
PHC2300
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
43
K/W
Fig.5
Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
P-channel; typical values.
handbook, full pagewidth
102
10
1
101
106
105
104
103
102
101
1
MDA244
Rth js
(K/W)
tp (s)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
tp
T
P
t
T
δ =
(6)
δ = 0.1.
(7)
δ = 0.05.
(8)
δ = 0.02.
(9)
δ = 0.01.
(10)
δ =0.
(1)
δ = 1.00.
(2)
δ = 0.75.
(3)
δ = 0.5.
(4)
δ = 0.33.
(5)
δ = 0.2.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per FET
V(BR)DSS
drain-source breakdown voltage
N-channel
VGS = 0; ID =10 A
300
V
P-channel
VGS = 0; ID = 10 A
300
V
VGSth
gate-source threshold voltage
N-channel
VGS =VDS; ID =1mA
0.8
2V
P-channel
VGS =VDS; ID = 1mA
0.8
2V
IDSS
drain-source leakage current
N-channel
VGS = 0; VDS = 240 V
100
nA
P-channel
VGS = 0; VDS = 240 V
100 nA
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