參數(shù)資料
型號： 934055500118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 9/15頁
文件大?。?/td> 324K
代理商： 934055500118
Philips Semiconductors
PHB160N03T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 13 September 2000
3 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25°C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
T
mb
(
o
C)
(%)
120
100
80
60
40
20
0
Ider
(%)
0
25
50
75
100
125
150
175
200
Tmb (
o
C)
03ad31
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
ID
(A)
10
1
tp = 10
s
100
s
1 ms
10 ms
100ms
DC
RDSon = VDS / ID
tp
T
P
t
T
δ =
03ad34
VDS (V)
110
103
102
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