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參數(shù)資料
| 型號： | 934055500118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大小： | 324K |
| 代理商： | 934055500118 |
Philips Semiconductors
PHB160N03T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 13 September 2000
5 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS =0V
Tj =25 °C30
V
Tj = 55 °C27
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 30 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 °C
4.3
5
m
Tj = 175 °C
9.3
m
Dynamic characteristics
gfs
forward transconductance
VDS =25V;ID =25A;
55
S
Qg(tot)
total gate charge
ID = 75 A; VDS =15V;
125
nC
Qgs
gate-source charge
19
nC
Qgd
gate-drain (Miller) charge
56
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V;
f = 1 MHz; Figure 12
4500
6000
pF
Coss
output capacitance
1500
1800
pF
Crss
reverse transfer capacitance
960
1300
pF
td(on)
turn-on delay time
VDD = 30 V; RD = 1.2 ;
VGS =10V; RG =10
35
55
ns
tr
turn-on rise time
130
200
ns
td(off)
turn-off delay time
155
230
ns
tf
turn-off fall time
150
220
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.85
1.2
V
IS = 75 A; VGS =0V;
1.1
V
trr
reverse recovery time
IS =75A;
dIS/dt = 100 A/s;
VGS = 10 V; VDS =30V
400
ns
Qr
recovered charge
1.0
C
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