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參數(shù)資料
| 型號： | 934056036215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 934056036215 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
8 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa38
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
VGS(th)
(V)
typ
min
Tj (°C)
03aa89
10-6
10-5
10-4
10-3
10-2
10-1
0
0.4
0.8
1.2
1.6
2
VGS (V)
(A)
ID
min
typ
03aa76
0
0.1
0.2
0.3
0.4
0.5
0
0.2
0.4
0.6
ID (A)
gfs
(S)
150
°C
Tj = 25 °C
03aa78
1
10
102
10-1
110
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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