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參數(shù)資料
| 型號(hào)： | 934056036215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 934056036215 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
5 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID =10 A; VGS =0V
Tj =25 °C55
75
-
V
Tj = 55 °C50
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
0.4
1.0
1.3
V
Tj = 150 °C
0.3
-
V
Tj = 55 °C
-
2.5
V
IDSS
drain-source leakage current
VDS = 44 V; VGS =0V
Tj =25 °C
-
0.01
1.0
A
Tj = 150 °C-
-
10
A
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state
resistance
VGS = 2.5 V; ID =75mA;
Tj =25 °C
-
2.4
5
Tj = 150 °C
-
7.4
VGS = 4.5 V; ID = 500 mA;
Tj =25 °C
-
2.3
4
VGS = 1.8 V; ID =75mA;
Tj =25 °C
-
3.1
8
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 200 mA;
100
380
-
mS
Qg(tot)
total gate charge
ID = 0.5 A; VDS =44V;
-
1.0
-
nC
Qgs
gate-source charge
-
0.05
-
nC
Qgd
gate-drain (Miller) charge
-
0.5
-
nC
Ciss
input capacitance
VGS =0V; VDS =10V;
f = 1 MHz; Figure 12
-17
40
pF
Coss
output capacitance
-
7
30
pF
Crss
reverse transfer capacitance
-
4
10
pF
ton
turn-on time
VDD = 50 V; RD = 250 ;
VGS =10V; RG =50 ;
RGS =50
-
4
10
ns
toff
turn-off time
-
11
15
ns
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