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參數(shù)資料
| 型號： | 934056036215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 934056036215 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
2 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 150 °C
-
55
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V
-
335
mA
Ptot
total power dissipation
Tsp =25 °C
-
0.83
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 500 mA
2.3
4.0
VGS = 2.5 V; ID = 75 mA
2.4
5.0
VGS = 1.8 V; ID = 75 mA
3.1
8.0
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 150 °C
-
55
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 150 °C; RGS =20k
-55
V
VGS
gate-source voltage
-
±10
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V;
-
335
mA
-
212
mA
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s;
-
1.3
A
Ptot
total power dissipation
-
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
-
335
mA
ISM
peak source (diode forward) current
Tsp =25 °C; pulsed; tp ≤ 10 s
-
1.3
A
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