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參數(shù)資料
| 型號： | 934056036215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 281K |
| 代理商： | 934056036215 |
Philips Semiconductors
BSH111
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 26 April 2002
9 of 13
9397 750 09629
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 0.5 A; VDS =44V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03aa77
0
0.2
0.4
0.6
0.8
1
0
0.4
0.8
1.2
1.6
VSD (V)
IS
(A)
Tj = 25 °C
150
°C
03ab08
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
QG (nC)
VGS
(V)
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