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參數(shù)資料
| 型號： | 934056831118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 246K |
| 代理商： | 934056831118 |
Philips Semiconductors
PHKD6N02LT
Dual N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 07 September 2001
7 of 12
9397 750 08522
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz.
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
01
10
Ciss
Coss
Crss
VDS (V)
C
(pF)
102
103
104
003aaa145
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