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參數(shù)資料
| 型號(hào)： | 934056831118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | 934056831118 |
Philips Semiconductors
PHKD6N02LT
Dual N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 07 September 2001
3 of 12
9397 750 08522
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
DC
VDS (V)
110
102
10-1
ID
(A)
102
10
1
10-1
10-2
tp =
10
s
1 ms
10 ms
0.1 s
tp
T
P
t
T
δ =
RDSon = VDS / ID
003aaa140
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