參數(shù)資料
型號(hào): 934056831118
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 246K
代理商: 934056831118
Philips Semiconductors
PHKD6N02LT
Dual N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 07 September 2001
6 of 12
9397 750 08522
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C; tp = 300 sVDS =10V
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
VDS (V)
ID
(A)
30
20
10
0
VGS (V) =
2.0
2.5
3.0
5.0
10.0
01
2
3
4
5
6
003aaa142
Tj = 150
oC
Tj = 25
oC
ID
(A)
40
30
20
10
0
VGS (V)
1
2345
0
003aaa143
VGS (V) =
2.0
2.5
3.0
5.0
10
RDSon
(m
)
100
200
300
400
0
ID (A)
2
4
6
8
10
0
003aaa144
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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