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參數(shù)資料
| 型號： | 934056831118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 246K |
| 代理商： | 934056831118 |
Philips Semiconductors
PHKD6N02LT
Dual N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 07 September 2001
2 of 12
9397 750 08522
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
20
V
ID
drain current (DC)
Tsp =25 °C
6A
Ptot
total power dissipation
Tsp =25 °C
2W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS =5V; ID = 3 A
16
20
m
VGS = 2.5 V; ID = 3 A
3645m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
20
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
20
V
VGS
gate-source voltage (DC)
±12
V
ID
drain current (DC)
6A
IDM
peak drain current
24
A
Ptot
total power dissipation
2W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain (reverse) diode
IS
source (diode forward) current (DC)
Tsp =25 °C
6A
ISM
peak (diode forward) source current Tsp =25 °C; tp ≤ 10 s
24
A
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