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參數(shù)資料
| 型號(hào)： | 934056831118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | 934056831118 |
Philips Semiconductors
PHKD6N02LT
Dual N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 07 September 2001
5 of 12
9397 750 08522
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
20
V
VGS(th)
gate-source threshold voltage
0.5
-
1.5
V
IDSS
drain-source leakage current
VDS =20V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±12 V; VDS =0V
-
±1
A
RDSon
drain-source on-state resistance
Tj =25 °C
16
20
m
Tj = 150 °C
30
m
VGS = 2.5 V; ID =3A
36
45
m
Dynamic characteristics
gfs
forward transconductance
VDS =10V; ID = 3 A;
8.5
11
S
Qg(tot)
total gate charge
20
nC
Qgs
gate-source charge
4
nC
Qgd
gate-drain (Miller) charge
10
nC
Ciss
input capacitance
910
pF
Coss
output capacitance
600
pF
Crss
reverse transfer capacitance
400
pF
td(on)
turn-on delay time
VDD =10V; RD = 3.3 ; VGS =5V; RG = 4.7
11
ns
tr
rise time
42
ns
td(off)
turn-off delay time
140
ns
tf
fall time
96
ns
Source-drain (reverse) diode
VSD
1.2
V
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