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參數(shù)資料
| 型號(hào)： | 935185240518 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | SPECIALTY TELECOM CIRCUIT, PDSO20 |
| 封裝： | PLASTIC, SOT-266, SSOP-20 |
| 文件頁數(shù)： | 9/30頁 |
| 文件大小： | 251K |
| 代理商： | 935185240518 |
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1997 Feb 27
17
Philips Semiconductors
Product specication
Power amplier controller for GSM and
PCN systems
PCF5075
11 APPLICATION INFORMATION
11.1
Switching the dynamic range
For GSM phase 2 and PCN, some very low power levels
are needed. The control voltage VPL can be as low as
30 mV. This equates approximately to the 3 LSB of the
power level register, giving minimum adjustments of
approximately 30
8 mV. This does not provide acceptable
accuracy and other methods must be employed to allow
the PCF5075 to be used.
The DF pin (pin 12) can be used to switch a 13 dB
attenuator, right after the sensor, into the antenna
path.This has the advantage of not changing the
behaviour of the loop, however, the disadvantage is
introducing a certain amount of attenuation when switched
off. Alternatively, as shown in Fig.8, a gain stage can be
switched at the sensor. By doing this the loop gain and the
bandwidth of the loop will be switched. Consequently, at
least a 13 dB stability margin is needed if the switchable
gain stage has a range of 13 dB.
Fig.8 Application diagram for mobile stations.
handbook, full pagewidth
10
987654321
11
12
13
14
15
16
17
18
19
20
PCF5075
3-wire
serial
bus
13 MHz
33 pF
180
pF
180
pF
50 pF
100
H
RF POWER
AMPLIFIER
RFIN
900 MHz
4 to 9 dB
1 k
1 k
1
k
33 pF
antenna
sensor
C1
C2
MBE727
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