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參數(shù)資料
| 型號(hào)： | A28F010 |
| 廠商： | Intel Corp. |
| 英文描述： | 1024K (128K x 8) CMOS Flash Memory(1024K (128K x 8) CMOS閃速存儲(chǔ)器) |
| 中文描述： | 1024K（128K的× 8）的CMOS閃存（1024K（128K的× 8）的CMOS閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 13/23頁(yè) |
| 文件大小： | 284K |
| 代理商： | A28F010 |
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A28F010
ABSOLUTE MAXIMUM RATINGS
*
Operating Temperature
During Read àààààààààààààà
b
40
§
C to
a
125
§
C
(1)
During Erase/Program ààààààà
b
40
§
C to
a
125
§
C
Temperature Under Biasàààààààà
b
40
§
C to
a
125
§
C
Storage Temperature àààààààààà
b
65
§
C to
a
150
§
C
Voltage on Any Pin with
Respect to Ground àààààààààà
b
2.0V to
a
7.0V
(2)
Voltage on Pin A
9
with
Respect to Ground ààààààà
b
2.0V to
a
13.5V
(2, 3)
V
PP
Supply Voltage with
Respect to Ground
During Erase/Programàààà
b
2.0V to
a
14.0V
(2, 3)
V
CC
Supply Voltage with
Respect to Ground àààààààààà
b
2.0V to
a
7.0V
(2)
Output Short Circuit Currentààààààààààààà100 mA
(4)
Maximum Junction Temperature (T
J
) àààààà
a
140
§
C
NOTICE: This is a production data sheet. The specifi-
cations are subject to change without notice.
*
WARNING: Stressing the device beyond the ‘‘Absolute
Maximum Ratings’’ may cause permanent damage.
These are stress ratings only. Operation beyond the
‘‘Operating Conditions’’ is not recommended and ex-
tended exposure beyond the ‘‘Operating Conditions’’
may affect device reliability.
NOTES:
1. Operating temperature is for automotive product defined by this specification.
2. Minimum DC input voltage is
b
0.5V. During transitions, inputs may undershoot to
b
2.0V for periods less than 20 ns.
Maximum DC voltage on output pins is V
CC
a
0.5V, which may overshoot to V
CC
a
2.0V for periods less than 20 ns.
3. Maximum DC voltage on A
9
or V
PP
may overshoot to
a
14.0V for periods less than 20 ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.
OPERATING CONDITIONS
Symbol
Parameter
Limits
Unit
Comments
Min
Max
T
A
Operating Temperature
b
40
a
125
§
C
For Read-Only and
Read/Write Operations
V
CC
V
CC
Supply Voltage
4.50
5.50
V
DC CHARACTERISTICSDTTL/NMOS COMPATIBLE
Symbol
Parameter
Notes
Limits
Unit
Test Conditions
Min Typical Max
I
LI
Input Leakage Current
1
g
1.0
m
A V
CC
e
V
CC
Max
V
IN
e
V
CC
or V
SS
I
LO
Output Leakage Current
1
g
10
m
A V
CC
e
V
CC
Max
V
OUT
e
V
CC
or V
SS
mA V
CC
e
V
CC
Max
CE
Y
e
V
IH
mA V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
6 MHz, I
OUT
e
0 mA
I
CCS
V
CC
Standby Current
1
1.0
I
CC1
V
CC
Active Read Current
1
10
30
I
CC2
V
CC
Programming Current
1, 2
1.0
30
mA Programming in Progress
I
CC3
V
CC
Erase Current
1, 2
5.0
30
mA Erasure in Progress
I
CC4
V
CC
Program Verify Current
1, 2
5.0
30
mA V
PP
e
V
PPH
Program Verify in Progress
mA V
PP
e
V
PPH
Erase Verify in Progress
I
CC5
V
CC
Erase Verify Current
1, 2
5.0
30
I
PPS
V
PP
Leakage Current
1
g
10
m
A V
PP
s
V
CC
m
A V
PP
l
V
CC
I
PP1
V
PP
Read Current or
Standby Current
1
90
200
g
10
m
A V
PP
s
V
CC
13
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