VDD
參數(shù)資料
型號: AD5263BRU50-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 22/28頁
文件大小: 0K
描述: IC DGTL POT QUAD 256POS 24-TSSOP
標(biāo)準(zhǔn)包裝: 1,000
接片: 256
電阻(歐姆): 50k
電路數(shù): 4
溫度系數(shù): 標(biāo)準(zhǔn)值 30 ppm/°C
存儲器類型: 易失
接口: I²C,SPI(芯片選擇,設(shè)備位址)
電源電壓: 2.7 V ~ 5.5 V,5 V ~ 15 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 24-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 24-TSSOP
包裝: 帶卷 (TR)
Data Sheet
AD5263
Rev. F | Page 3 of 28
ELECTRICAL CHARACTERISTICS—20 k, 50 k, 200 k VERSIONS
VDD = +5 V, VSS = –5 V, VL = +5 V, VA = +VDD, VB = 0 V, –40°C < TA < +125°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Specifications apply to all VRs
Resistor Differential NL2
R-DNL
R
WB, VA = NC
1
±1/4
+1
LSB
Resistor Nonlinearity2
R-INL
R
WB, VA = NC
1
±1/2
+1
LSB
Nominal Resistor Tolerance3
R
AB
T
A = 25°C
30
+30
%
Resistance Mode Temperature
Coefficient
R
WB/T
30
ppm/°C
R
WA/T
30
ppm/°C
Wiper Resistance
R
W
I
W = 1 V/RAB
60
150
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Specifications apply to all VRs
Resolution
N
8
Bits
Differential Nonlinearity4
DNL
1
±1/4
+1
LSB
Integral Nonlinearity4
INL
1
±1/2
+1
LSB
Voltage Divider Temperature Coefficient
V
W/T
Code = 0x80
5
ppm/°C
Full-Scale Error
V
WFSE
Code = 0xFF
2
1
+0
LSB
Zero-Scale Error
V
WZSE
Code = 0x00
0
+1
+2
LSB
RESISTOR TERMINALS
Voltage Range5
V
A,B,W
V
SS
V
DD
V
Capacitance6 Ax, Bx
C
A,B
f = 1 MHz, measured to GND,
Code = 0x80
25
pF
Capacitance6 Wx
C
W
f = 1 MHz, measured to GND,
Code = 0x80
55
pF
Common-Mode Leakage
I
CM
V
A = VB = VDD/2
1
nA
Shutdown Current7
I
SHDN
0.02
5
A
DIGITAL INPUTS
Input Logic High
V
IH
2.4
V
Input Logic Low
V
IL
0.8
V
Input Logic High (SDA and SCL)
V
IH
V
SS = 0 V
0.7 × V
L
V
L + 0.5
V
Input Logic Low (SDA and SCL)
V
IL
V
SS = 0 V
0.5
0.3 × V
L
V
Input Current
I
IL
V
IN = 0 V or +5 V
±1
A
Input Capacitance6
C
IL
5
pF
DIGITAL OUTPUTS
SDA
V
OL
I
SINK = 3 mA
0.4
V
OL
I
SINK = 6 mA
0.6
V
O1, O2
V
OH
I
SOURCE = 40 A
4
V
O1, O2
V
OL
I
SINK = 1.6 mA
0.4
V
SDO
V
OH
R
L = 2.2 k to VDD
V
DD 0.1
V
SDO
V
OL
I
SINK = 3 mA
0.4
V
Three-State Leakage Current
I
OZ
V
IN = 0 V or +5 V
±1
A
Output Capacitance6
C
OZ
3
8
pF
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