參數(shù)資料
型號: ADN2860
廠商: ANALOG DEVICES INC
元件分類: 數(shù)字電位計
英文描述: High Bandwidth, CMOS 8-Bit Serial Interface Multiplying D/A Converter; Package: MSOP; No of Pins: 10; Temperature Range: Industrial
中文描述: 250K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 512 POSITIONS, QCC24
封裝: 4 X 4 MM, LFCSP-24
文件頁數(shù): 9/15頁
文件大?。?/td> 1132K
代理商: ADN2860
Preliminary Technical Data
RDAC I
2
C Interface Description (cont’d)
S
0
1
0
1
1
A
1
R
R
ADN2860
Page 9 of 15
A
0
0
A
CMD/
W
C
3
C
2
C
1
C
0
A
2
A
1
A
0
A
P
Figure 11. RDAC Command Write (Dummy Write)
RDAC Command Table
(CMD/
W
=1)
C3 C2 C1 C0
0 0 0 0
0 0 0 1
0 0 1 0
0 0 1 1
0 1 0 0
0 1 0 1
0 1 1 0
0 1 1 1
1 0 0 0
1 0 0 1
1 0 1 0
1 0 1 1
1 1 0 0 to
1 1 1 1
Table 3. RDAC Commands
* This command leaves the device in the EEPROM Read power state. Issue the NOP
command to return the device to the idle state.
RDAC Interface Operation
Each programmable resistor wiper setting is controlled by
specific RDAC registers, as shown in the RDAC Register
Address Table (table 1). Each RDAC register corresponds to an
EEPROM memory location, which provides non-volatile wiper
storage functionality.
RDAC registers and their corresponding EEPROM memory
locations can be programmed and read independently from each
other. The RDAC register can be refreshed by the EEPROM
locations either with a hardware reset via pin 1, or by issuing
one of the various RDAC register load commands shown in the
RDAC command table (table 3).
RDAC Write
Setting the wiper position requires an RDAC write operation,
shown in figure 8. RDAC write operations follow a format
similar to the EEPROM write interface. The only difference
between an RDAC write and an EEPROM write operation is the
use of an RDAC address byte in place of the memory address
used in the EEPROM write operation. The RDAC address byte
is described in detail in the tables 1 and 2.
As with the EEPROM write operation, the RDAC write
operation disables the I
C interface during the internal write
cycle. Acknowledge polling, as described in the EEPROM I
2
C
Command Description
NOP
Load EEPROM to RDAC*
Store RDAC to EEPROM
Decrement RDAC 6dB
Decrement All RDACs 6dB
Decrement RDAC One Step
Decrement All RDACs One Step
Reset: Load EEPROM to all RDACs
Increment RDAC 6dB
Increment All RDAC 6dB
Increment RDAC One Step
Increment All RDAC One Step
reserved
interface section, is required to determine whether the write
cycle has been completed.
RDAC Read
The ADN2860 provides two RDAC read operations. The first,
shown in figure 9 reads the contents of the current RDAC
address counter. Figure 10 illustrates the second read operation.
This operation allows users to specify which RDAC register to
read by first issuing a “dummy write” command to change the
RDAC address pointer, and then proceeding with the RDAC
read operation at the new address location.
The read-only RDAC EEPROM memory locations can also be
read by using the address and bits specified in the RDAC Read-
Only EEPROM Address Table (table 2).
RDAC Quick Commands
Eleven shortcut “quick” commands are provided for easy
manipulation of RDAC registers and their corresponding
EEPROM memory locations. These commands are shown in
table 3.
The interface for issuing an RDAC quick command is shown in
figure 11. All quick commands require Acknowledge polling to
determine whether the command has finished executing.
1 Cmd
RDAC Slave Address
0 Write
REV. PrD
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