參數(shù)資料
型號： AGR21010EU
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SURFACE MOUNT PACKAGE-2
文件頁數(shù)： 11/18頁
文件大?。?/td> 504K
代理商： AGR21010EU
2
Agere Systems Inc.
10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET
April 2003
AGR21010E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics, 921 MHz—960 MHz
Table 5. RF Characteristics, 921 MHz—960 MHz
1. Across band, 921 MHz—960 MHz.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =25A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
0.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =26 V, VGS =0V)
IDSS
——
0.9
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—0.65
—
S
Gate Threshold Voltage (VDS =10V, ID =43A)
VGS(TH)
—
3.3
4.8
Vdc
Gate Quiescent Voltage (VDS =26 V, ID = 100 mA)
VGS(Q)
—3.7
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.5 A)
VDS(ON)
—0.56
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =26V, VGS =0, f= 1.0 MHz)
CRSS
—0.25
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
COSS
—5.15
—
pF
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
CISS
—
18.2
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT = 2 W, IDQ = 100 mA)
GPS
—21
—
dB
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 100 mA)
η
—61
—
%
EDGE Linearity Characterization
(POUT = 2 W, f = 940.5 MHz, VDS = 26 V, IDQ = 100 mA):
Modulation spectrum @ ±400 kHz (Alt1)
—–58
—
dBc
Modulation spectrum @ ±600 kHz (Alt2)
—–71
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 100 mA)
P1dB
10
11
—
W
Input Return Loss
IRL
–12
—
dB
Ruggedness
(VDS = 26 V, POUT = 10 W, IDQ = 100 mA, VSWR = 10:1, all
angles)
ψ
No degradation in output power.
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