- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄223346 > AM29BDS320GBD3VMF (SPANSION LLC) 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 PDF資料下載
參數(shù)資料
| 型號： | AM29BDS320GBD3VMF |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 23/75頁 |
| 文件大小： | 1075K |
| 代理商： | AM29BDS320GBD3VMF |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁
Publication Number 27243
Revision B Amendment 2 Issue Date May 15, 2007
Am29BDS320G
32 Megabit (2 M x 16-Bit), 1.8 Volt-only
Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single 1.8 volt read, program and erase (1.65 to
1.95 volt)
Manufactured on 0.17 m process technology
Enhanced VersatileIO (VIO) Feature
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the VIO pin
— 1.8V and 3V compatible I/O signals
Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 8Mb/8Mb/8Mb/8Mb
Programmable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
Sector Architecture
— Eight 8 Kword sectors and sixty-two 32 Kword
sectors
— Banks A and D each contain four 8 Kword sectors and
fifteen 32 Kword sectors; Banks B and C each contain
sixteen 32 Kword sectors
— Eight 8 Kword boot sectors, four at the top of the
address range, and four at the bottom of the address
range
Minimum 1 million erase cycle guarantee per
sector
20-year data retention at 125°C
— Reliable operation for the life of the system
64-ball FBGA package
Performance Charcteristics
Read access times at 54/40 MHz (at 30 pF)
— Burst access times of 13.5/20 ns
— Asynchronous random access times of 70 ns
— Initial Synchronous access times as fast as 87.5/95 ns
Power dissipation (typical values, CL = 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 A
Hardware Features
Sector Protection
— Software command sector locking
Reduced Wait-State Handshaking feature available
— Provides host system with minimum possible latency
by monitoring RDY
Hardware reset input (RESET#)
— Hardware method to reset the device for reading
array data
WP# input
— Write protect (WP#) function protects sectors 0 and 1
(bottom boot), or sectors 68 and 69 (top boot),
regardless of sector protect status
ACC input: Acceleration function reduces
programming time; all sectors locked when ACC =
VIL
CMOS compatible inputs, CMOS compatible outputs
Low VCC write inhibit
Software Features
Supports Common Flash Memory Interface (CFI)
Software command set compatible with JEDEC
42.4 standards
— Backwards compatible with Am29F and Am29LV
families
Data# Polling and toggle bits
— Provides a software method of detecting program
and erase operation completion
Erase Suspend/Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
The Am29BDS320G has been retired and is not recommended for designs. For new and current designs, S29WS064J supersedes Am29BDS320G
and is the factory-recommended migration path for this device. Please refer to the S29WS064J data sheet for specifications and ordering
information. Availability of this document is retained for reference and historical purposes only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDS320GTC8VMF | 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64 |
| AM29DL163CB70RZCB | 2M X 8 FLASH 3V PROM, 70 ns, PDSO48 |
| AM29DL162CB120WCEB | 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 |
| AM29DL162CB120EIN | 2M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| AM29DL162CT120EIB | 2M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BDS643GT5KVAI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays |
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。