參數(shù)資料
型號(hào)： AM29BDS320GBD3VMF
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
封裝： 8 X 9 MM, 0.80 MM PITCH, FBGA-64
文件頁數(shù)： 32/75頁
文件大?。?/td> 1075K
代理商： AM29BDS320GBD3VMF
36
Am29BDS320G
27243B2 May 15, 2007
Data
Sheet
Command Definitions
Table 14. Command Definitions
Command Sequence
(Notes)
Cyc
les
Bus Cycles (Notes 1–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr Data
Asynchronous Read (6)
1
RA
RD
Reset (7)
1
XXX
F0
A
u
to
sel
ect
(8)
Manufacturer ID
4
555
AA
2AA
55
(BA)555
90
(BA)X00
0001
Device ID (9)
6
555
AA
2AA
55
(BA)555
90
(BA)X01
227E
(BA)X
0E
(BA)
X0F
2200
Sector Lock Verify (10)
4
555
AA
2AA
55
(SA)555
90
(SA)X02
0000/0001
Handshaking Option (11)
4
555
AA
2AA
55
(BA)555
90
(BA)X03
0042/0043
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (12)
2
XXX
A0
PA
PD
Unlock Bypass Sector Erase (12)
2
XXX
80
SA
30
Unlock Bypass Chip Erase (12)
2
XXX
80
XXX
10
Unlock Bypass Reset (13)
2
BA
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (7, 14)
1
BA
B0
Erase Resume (15)
1
BA
30
Sector Lock/Unlock (7)
3
BA
60
BA
60
SLA
60
Set Burst Mode
Configuration Register (16)
3
555
AA
2AA
55
(CR)555
C0
CFI Query (17)
1
55
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the rising edge of the AVD# pulse.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# pulse.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A13 uniquely select any sector.
BA = Address of the bank (A20, A19) that is being switched to
Autoselect mode, is in bypass mode, is being erased, or is being
selected for sector lock/unlock.
SLA = Address of the sector to be locked. Set sector address (SA)
and either A6 = 1 for unlocked or A6 = 0 for locked.
CR = Configuration Register address bits A19–A12.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5. Unless otherwise noted, address bits A20–A12 are don’t cares.
6. No unlock or command cycles required when bank is reading
array data.
7. The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information) or
performing sector lock/unlock.
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address. See the
Autoselect Command Sequence section for more information.
9. The data in the fifth cycle is 2222 for 1.8 V VIO, and 2214 for 3.0
V VIO (top boot); 2223 for 1.8 V VIO, and 2234 for 3.0 V VIO
(bottom boot).
10. The data is 0000h for an unlocked sector and 0001h for a locked
sector
11. The data is 0043h for reduced wait-state handshaking and
0042h for standard handshaking.
12. The Unlock Bypass command sequence is required prior to this
command sequence.
13. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
Sequence” for details.
17. Command is valid when device is ready to read array data or
when device is in autoselect mode.
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