- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄253907 > AM29F017D-120FD (SPANSION LLC) 2M X 8 FLASH 5V PROM, 120 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號： | AM29F017D-120FD |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 8 FLASH 5V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 23/46頁 |
| 文件大?。?/td> | 1387K |
| 代理商： | AM29F017D-120FD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21195
Rev: E Amendment/+3
Issue Date: July 29, 2005
Am29F017D
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Optimized for memory card applications
— Backwards-compatible with Am29F016C and
Am29F017B
5.0 V
± 10%, single power supply operation
— Minimizes system level power requirements
Manufactured on 0.23 m process technology
High performance
— Access times as fast as 70 ns
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 A typical standby current (standard access
time to active mode)
Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Minimum 1,000,000 program/erase cycles per
sector guaranteed
20-year data retention at 125
°C
— Reliable operation for the life of the system
Package options
— 40-pin TSOP
— 48-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV004T-70RFF | 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 |
| AM29LV004T-80EF | 512K X 8 FLASH 3V PROM, 80 ns, PDSO40 |
| AT28C1024-20BM/883 | 64K X 16 EEPROM 5V, 200 ns, CDIP40 |
| AM99C641-45/LMC | 64K X 1 STANDARD SRAM, 45 ns, CQCC22 |
| AM27128A-15LIB | 16K X 8 UVPROM, 150 ns, CQCC32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-120ED | 制造商:Spansion 功能描述: |
| AM29F032B75ED | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-75EF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32M (4M X 8-BIT) 5V FLSH SCTR 制造商:Spansion 功能描述:IC, FLASH MEM, 32MBIT, 75NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:32Mbi |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。