參數(shù)資料
型號(hào)： Am29PDS322DB10
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
中文描述： 32兆位（2米× 16位），1.8伏的CMOS只（1.8伏至2.2 V）同步讀/寫頁(yè)模式引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 22/50頁(yè)
文件大?。?/td> 839K
代理商： AM29PDS322DB10
August 7, 2002
Am29PDS322D
21
A D V A N C E I N F O R M A T I O N
writes are ignored until V
CC
is greater than V
LKO
. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
Write Pulse
“
Glitch
”
Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 10 defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
resets
the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
The system
must
issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
See the next section, Reset Command, for more infor-
mation.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and Figure 15 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don
’
t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 10 shows the address and data requirements.
This method is an alternative to that shown in Table 7,
which is intended for PROM programmers and re-
quires V
ID
on address pin A9. The autoselect com-
mand sequence may be written to an address that is
either in the read or erase-suspend-read mode. The
autoselect command may not be written while the de-
vice is actively programming or erasing.
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect mode,
相關(guān)PDF資料
PDF描述
Am29PDS322DB12 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
Am29PDS322DT12 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
AM29PL160CB90EI High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125
AM29PL160CB-120 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-120EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29PL141BXA 制造商:AMD 功能描述:*
AM29PL141DC 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP
AM29PL160CB-90SF 制造商:Advanced Micro Devices 功能描述:
AM29PL160CB-90SI 制造商:SOCO 功能描述:
AM29SL160CT-100EIN 制造商:Advanced Micro Devices 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*