參數(shù)資料
型號: Am29PDS322DT12
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
中文描述: 32兆位(2米× 16位),1.8伏的CMOS只(1.8伏至2.2 V)同步讀/寫頁模式引導(dǎo)扇區(qū)閃存
文件頁數(shù): 33/50頁
文件大?。?/td> 839K
代理商: AM29PDS322DT12
32
Am29PDS322D
August 7, 2002
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for 150 ns.
5. Embedded algorithm (program or erase) is in progress (at 8 MHz).
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
;
A9, OE#, RESET# = 11 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±
1.0
μA
I
CC1
V
Active Inter-Page Read Current
(Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
,
1 MHz
2.5
3
mA
10 MHz
24
28
I
CC2
I
CC3
V
CC
Active Write Current (Notes 2, 3) CE# = V
IL,
OE# = V
IH
V
CC
Standby Current (Note 2)
15
30
mA
CE#, RESET# = V
CC
±
0.3 V
WP#/ACC = V
CC
±
0.3 V,
RESET# = V
SS
±
0.3 V
CE# = V
SS
±
0.3 V;
RESET# = V
CC
±
0.3 V,
V
IN
= V
CC
±
0.3 V or V
SS
±
0.3 V
0.2
5
μA
I
CC4
V
CC
Reset Current (Note 2)
0.1
5
μA
I
CC5
V
CC
Automatic Sleep Mode Current
(Notes 2, 4)
0.2
5
μA
I
CC6
V
CC
Active Read-While-Program
Current (Notes 1, 2, 5)
CE# = V
IL
,
OE# = V
IH
30
55
mA
I
CC7
V
CC
Active Read-While-Erase
Current (Notes 1, 2, 5)
CE# = V
IL
, OE# = V
IH
30
55
mA
I
CC8
V
CC
Active
Program-While-Erase-Suspended
Current (Note 2)
CE# = V
IL
, OE# = V
IH
17
35
mA
I
CC9
V
CC
Active Intra-Page Read Current CE# = V
IL
, OE# = V
IH
10 MHz
0.5
1
mA
20 MHz
1
2
I
ACC
WP#/ACC Accelerated Program
Current
V
CC
= V
CCMax
, WP#/ACC = V
ACCMax
12
20
mA
V
IL
Input Low Voltage
0.5
V
CC
x 0.2
V
V
IH
Input High Voltage
0.8 x V
CC
V
CC
+ 0.3
V
V
ACC
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
V
CC
= 1.8
2.2 V
8.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 1.8
2.2 V
9
11
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC min
I
OH
=
100 μA
0.1
V
Output High Voltage
V
CC
0.1
1.2
V
Low V
CC
Lock-Out Voltage
1.5
V
相關(guān)PDF資料
PDF描述
AM29PL160CB90EI High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125
AM29PL160CB-120 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-120EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-120SI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-120SKI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29PL141BXA 制造商:AMD 功能描述:*
AM29PL141DC 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP
AM29PL160CB-90SF 制造商:Advanced Micro Devices 功能描述:
AM29PL160CB-90SI 制造商:SOCO 功能描述:
AM29SL160CT-100EIN 制造商:Advanced Micro Devices 功能描述: