參數(shù)資料
型號(hào): Am29PDS322DT12
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
中文描述: 32兆位(2米× 16位),1.8伏的CMOS只(1.8伏至2.2 V)同步讀/寫頁(yè)模式引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 42/50頁(yè)
文件大小: 839K
代理商: AM29PDS322DT12
August 7, 2002
Am29PDS322D
41
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Figure 21.
Back-to-back Read/Write Cycle Timings
OE#
CE#
WE#
Addresses
t
OH
Data
Valid
In
Valid
In
Valid PA
Valid RA
t
WC
t
WPH
t
AH
t
WP
t
DS
t
DH
t
RC
t
CE
Valid
Out
t
OE
t
ACC
t
OEH
t
GHWL
t
DF
Valid
In
CE# Controlled Write Cycles
WE# Controlled Write Cycle
Valid PA
Valid PA
t
CP
t
CPH
t
WC
t
WC
Read Cycle
t
SR/W
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0
DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 22.
Data# Polling Timings (During Embedded Algorithms)
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