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參數(shù)資料
| 型號： | Am29PDS322DT12 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只（1.8伏至2.2 V）同步讀/寫頁模式引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 39/50頁 |
| 文件大?。?/td> | 839K |
| 代理商： | AM29PDS322DT12 |
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38
Am29PDS322D
August 7, 2002
A D V A N C E I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
“
Erase And Programming Performance
”
section for more information.
Parameter
Speed Option
JEDEC
Std
Description
10
12
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
60
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
60
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
Chip Enable High during toggle bit polling
Min
20
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
60
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
60
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
11
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (Note 2)
Typ
5
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
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