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參數(shù)資料
| 型號： | Am29PDS322DT12 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只（1.8伏至2.2 V）同步讀/寫頁模式引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 50/50頁 |
| 文件大?。?/td> | 839K |
| 代理商： | AM29PDS322DT12 |
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August 7, 2002
Am29PDS322D
49
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY
Revision A (December 4, 2000)
Initial release.
Revision A+1 (February 16, 2001)
Ordering Information
Added
“
U
”
designator to package marking. Deleted
burn-in option.
Revision A+2 (August 31, 2001)
Autoselect Command Sequence
Modified section to point to appropriate tables for au-
toselect functions.
Revision A+3 (February 18, 2002)
Global
Removed
“
Advance Information
”
designation from
data sheet.
Erase Suspend/Erase Resume Commands
Noted in the third paragraph that unlock bypass pro-
gramming is not allowed when the device is erase sus-
pended.
Revision A+4 (August 7, 2002)
Distinctive Characteristics
Removed
“
Supports Common Flash Memory Interface
(CFI))
Table 10. Am29PDS322D Command Definitions
Changed the Command Cycle Device ID cycle from 6
to 4.
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
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