參數(shù)資料
型號: AM41DL6408H8H70IS
廠商: Advanced Micro Devices, Inc.
英文描述: TV 6C 6#20 PIN WALL RECP
中文描述: 堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 40/66頁
文件大?。?/td> 1123K
代理商: AM41DL6408H8H70IS
38
Am41DL6408H
November 24, 2003
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC
Operating Power Supply Current
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
3
mA
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
0.2 V,
CE2
V
CC
– 0.2 V, V
IN
0.2 V or
V
IN
V
CC
– 0.2 V
3
mA
I
CC2
s
Average Operating Current
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
30
mA
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1.0 mA
2.4
V
I
SB
Standby Current (TTL)
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
V
CC
– 0.2 V, CE2
V
CC
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
0.3
mA
I
SB1
Standby Current (CMOS)
15
μA
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