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參數(shù)資料
| 型號(hào)： | AM41LV3204MT10IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA69 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69 |
| 文件頁數(shù)： | 42/67頁 |
| 文件大小： | 484K |
| 代理商： | AM41LV3204MT10IT |
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June 10, 2003
Am41LV3204M
41
P R E L I M I N A R Y
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
– 0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V, CIOs = V
SS
or
V
CC
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
, CIOs = V
SS
or V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
–1.0
1.0
μA
I
CC
Operating Power Supply Current
3
mA
I
CC1
s
Average Operating Current
3
mA
I
CC2
s
Average Operating Current
30
mA
V
OL
V
OH
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= –1.0 mA
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
≥
V
CC
– 0.2 V, CE2
≥
V
CC
–
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled) Other
input = 0 ~ V
CC
, CIOs = V
SS
or V
CC
0.4
V
Output High Voltage
2.4
V
I
SB
Standby Current (TTL)
0.3
mA
I
SB1
Standby Current (CMOS)
10
μA
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| AM41PDS3224DT110IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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