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| 型號(hào)： | AM41LV3204MT10IT |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | 存儲(chǔ)器 |
| 英文描述： | Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA69 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, FBGA-69 |
| 文件頁(yè)數(shù)： | 57/67頁(yè) |
| 文件大小： | 484K |
| 代理商： | AM41LV3204MT10IT |
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56
Am41LV3204M
June 10, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
Figure 27.
SRAM Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to
device interconnection.
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
CE2s
t
CO2
UB#s, LB#s
t
BHZ
t
HZ
t
BA
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