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參數(shù)資料
| 型號： | AM42BDS640AGBC8IS |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 8 X 11.60 MM, FBGA-93 |
| 文件頁數(shù)： | 31/72頁 |
| 文件大?。?/td> | 1064K |
| 代理商： | AM42BDS640AGBC8IS |
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36
Am42BDS640AG
November 1, 2002
P R E L I M INARY
FLASH DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum I
CC specifications are tested with VCC = VCCmax.
2. The I
CC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. I
CC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for t
ACC + 60 ns. Typical sleep mode current is equal to ICC3.
5. Total current during accelerated programming is the sum of V
ACC and VCC currents.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC, VCC = VCCmax
±1
A
I
LO
Output Leakage Current
V
OUT = VSS to VCC, VCC = VCCmax
±1
A
I
CCB
V
CC Active Burst Read Current
CE# = V
IL, OE# = VIL, WE# = VIH
10
20
mA
I
IO1
V
IO Active Read Current
V
IO = 1.8 V, CE# = VIL, OE# = VIL,
WE# = V
IH
15
30
mA
I
IO2
V
IO Non-active Output
V
IO = 1.8 V, OE# = VIH
0.2
10
A
I
CC1
V
CC Active Asynchronous Read
Current (Note 2)
CE# = V
IL, OE# = VIH,
WE# = V
IH
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC Active Write Current (Note 3)
CE# = V
IL, OE# = VIH, VPP = VIH
15
40
mA
I
CC3
V
CC Standby Current (Note 4)
CE# = RESET# = V
CC ± 0.2 V
0.2
10
A
I
CC4
V
CC Reset Current
RESET# = V
IL, CLK = VIL
0.2
10
A
I
CC5
V
CC Active Current
(Read While Write)
CE# = V
IL, OE# = VIH
25
60
mA
IACC
Accelerated Program Current
CE# = V
IL, OE# = VIH,
V
ACC = 12.0 ± 0.5 V
VACC
715
mA
VCC
510
mA
VIL
Input Low Voltage
VIO = 1.8 V
–0.5
0.2
V
VIH
Input High Voltage
VIO = 1.8 V
VIO – 0.2
VIO + 0.2
V
VOL
Output Low Voltage
IOL = 100 A, VCC = VCC min,
V
IO = VIO min
0.1
V
OH
Output High Voltage
I
OH = –100 A, VCC = VCC min,
V
IO = VIO min
V
IO – 0.1
V
ID
Voltage for Accelerated Program
11.5
12.5
V
LKO
Low V
CC Lock-out Voltage
1.0
1.4
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM42BDS640AGBC8IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGBC9IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM42BDS640AGBC9IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM42BDS640AGBD8IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM42BDS640AGBD8IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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