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參數(shù)資料
| 型號： | AO4496 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 198K |
| 代理商： | AO4496 |
AO4496
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ = 55°C
5
IGSS
±100
nA
VGS(th)
1.4
1.8
2.5
V
ID(ON)
50
A
16
19.5
TJ=125°C
24
29
21
26
gFS
30
S
VSD
0.76
1
V
IS
3
A
Ciss
550
715
pF
Coss
110
pF
Crss
55
pF
Rg
3
4
4.9
Qg (10V)
9.8
13
nC
Qg (4.5V)
4.6
6.1
nC
Qgs
1.8
nC
Qgd
2.2
nC
tD(on)
5
ns
tr
3.2
ns
tD(off)
24
ns
tf
6
ns
trr
22
29
ns
Qrr
14
nC
0
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current
ID = 250A, VGS = 0V
VGS = 10V, VDS = 5V
VDS = 30V, VGS = 0V
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
VGS = 10V, ID = 10A
Reverse Transfer Capacitance
IF=10A, dI/dt=100A/s
Static Drain-Source On-Resistance
Diode Forward Voltage
VGS = 4.5V, ID = 7.5A
m
Gate Threshold Voltage
VDS = VGS ID = 250A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
RDS(ON)
Drain-Source Breakdown Voltage
Turn-Off DelayTime
VGS=10V, VDS=15V, RL= 1.5,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
A
Total Gate Charge
VGS=10V, VDS=15V, ID=10A
Output Capacitance
IS = 1A,VGS = 0V
VDS = 5V, ID = 10A
Forward Transconductance
Gate resistance
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=15V, f=1MHz
Input Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4496_101 | 功能描述:MOSFET N-CH 30V 10A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:10A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:19.5 毫歐 @ 10A，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:13nC @ 10V 不同 Vds 時的輸入電容（Ciss）:715pF @ 15V 功率 - 最大值:3.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4496_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4498 | 功能描述:MOSFET N CH 30V 18A SOIC 8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4498E | 功能描述:MOSFET N-CH 30V 18A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4498EL | 功能描述:MOSFET N-CH 8-SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:18A（Ta） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時的 Vgs（th）（最大值）:2.3V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:50nC @ 10V Vgs（最大值）:±20V 不同 Vds 時的輸入電容（Ciss）（最大值）:2760pF @ 15V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:5.8 毫歐 @ 18A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:8-SOIC 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標(biāo)準(zhǔn)包裝:3,000 |
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