參數(shù)資料
型號: AP603-F
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14
文件頁數(shù): 10/20頁
文件大?。?/td> 1165K
代理商: AP603-F
AP603
High Dynamic Range 7W 28V HBT Amplifier
Applications Information
PC Board Layout
PCB Material: 0.0147” Rogers Ultralam 2000,
single layer, 1 oz Cu,
r = 2.45, Microstrip line
details: width = .042”, spacing = .050”
PCB Material: 0.021” Nelco N4000-13, single
layer, 1 oz Cu,
r = 3.7, Microstrip line details:
width = .042”, spacing = .050”
The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary
from company to company, careful process
development is recommended.
Baseplate Configuration
Data Sheet: Rev A 07/02/11
-
18 of 20 -
Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
Notes:
1.
Please note that for reliable operation, the evaluation board
will have to be mounted to a much larger heat sink during
operation and in laboratory environments to dissipate the
power consumed by the device. The use of a convection fan is
also recommended in laboratory environments.
2.
The area around the module underneath the PCB should not
contain any soldermask in order to maintain good RF
grounding.
3.
For proper and safe operation in the laboratory, the power-on
sequencing is recommended.
相關(guān)PDF資料
PDF描述
APDS-9120-020 PROXIMITY SENSOR-PHOTOELECTRIC, 1.25-2.55V, SQUARE, SURFACE MOUNT
APM4220KAC-TRG 13 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012BA
APS3603RS26Q1 50 MHz - 1000 MHz RF/MICROWAVE SPLITTER
APT-10566 4500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APT18-2735 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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