參數(shù)資料
型號: AP603-F
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14
文件頁數(shù): 3/20頁
文件大?。?/td> 1165K
代理商: AP603-F
AP603
High Dynamic Range 7W 28V HBT Amplifier
Application Circuit 2110-2170 MHz (AP603-PCB2140)
Notes:
Data Sheet: Rev A 07/02/11
-
11 of 20 -
Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
Bill of Material
Ref Des
Value Description
Manufacturer Part Number
U1
28V Power Amplifier
TriQuint
AP603-F
L3
4.7 nH
Ind, Chip, 0603, +/-0.3 nH
various
R1
2.0 K
Resistor, Chip, 0805, 1%, 1/10W
various
R2
698
Resistor, Chip, 0603, 1%, 1/10W
various
R5
5.1
Resistor, Chip, 0603, 5%, 1/16W
various
R3
750
Resistor, Chip, 0603, 5%, 1/16W
various
R4
10 K
Resistor, Chip, 0603, 5%, 1/16W
various
FB2
0
Resistor, Chip, 0603, 5%, 1/16W
various
C2
2.7 pF
CAP, 0603, +/- 0.05 pF, 50V. ACCU-P
AVX
06035J2R7ABSTR
C4
3.0 pF
CAP, 0603, +/- 0.05 pF, 50V. ACCU-P
AVX
06035J3R0ABSTR
C29
0.8 pF
CAP, 0603, +/- 0.05pF, 50V. ACCU-P
AVX
06035J0R8ABSTR
C7, C10, C18
1000 pF
CAP, 0603, 5%. 50V, NPO/COG
various
C16
0.1 uF
CAP, 0603, 10%. 50V, X7R
various
C9, C13
0.47 uF
CAP, 1206, 10%. 50V, X7R
various
C20, C28, C11
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C12
10.0 uF
CAP, 6032, 10%. 35V, TANT
various
C24
1.0 pF
CAP, 0603, +/- 0.05 pF, 50V. ACCU-P
AVX
06035J1R0ABSTR
C1, C5
22 pF
CAP, 0603, 5%, NPO/COG
various
D1
TVS Diode Array, 5V, SOT23, 2Ch
On-Semiconductor
SM05T1G
D2
Diode TVS, 33V, 400W, 5% SMA
On-Semiconductor
1SMA33AT3G
FB1
Filter EMI Ferrite Bead
various
1.
PC Board Material: 0.0147” Rogers Ultralam 2000, 1 oz Cu,
r = 2.45, Microstrip line details: width = .042”, spacing = .050”
2.
The primary RF microstrip line is 50
.
3.
Do not exceed +5.5V on Vpd or TVS diode D1 will be damaged.
4.
Do not exceed +33V on Vcc or TVS diode D2 will be damaged.
5.
Components shown on the silkscreen but not on the schematic are not used.
6.
The center of L3 is placed at 247 mil from the AP603 (U1) device package.
7.
The distance between edge of C2 and AP603 (U1) device package is 141 mil.
8.
The distance between edge of C24 and AP603 (U1) device package is 276 mil.
9.
The distance between the edge of C4 and AP603 (U1) device package is 210 mil.
10. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ
11. The main RF trace is cut at component L3 and L4 for this particular reference design.
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