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參數(shù)資料
| 型號： | AP603-F |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14 |
| 文件頁數(shù)： | 16/20頁 |
| 文件大?。?/td> | 1165K |
| 代理商： | AP603-F |
AP603
High Dynamic Range 7W 28V HBT Amplifier
Application Circuit 920-960 MHz (AP603-PCB900)
J1-2
V
pd
J1
-3
GND
J1-4
V
cc
C5
39 pF
R5
5.1
1
2
3
4
5
6
7
U1
14
13
12
11
10
9
8
C1
100 pF
J2
RF
Input
C20
100 pF
J3
RF
Output
C11
100 pF
C10
1000 pF
C9
0.47 uF
R4
10K
R2
698
D1
SM05T1G
C12
10 uF
6032
C7
1000 pF
R1
2.0K
0805
D2
SMAJ33
Backside
Paddle
Ground
AP603
C13
0.47 uF
FB1
C2
12 pF
C29
3.3 pF
C14
1000 pF
C15
100 pF
C24
5.6 pF
L4
5.6 nH
L3
2.4
Notes:
Bill of Material
Ref Des
Value Description
Manufacturer Part Number
U1
28V Power Amplifier
TriQuint
AP603-F
C5
39 pF
Cap, Chip, 0603, 50V, 5%, NPO
various
C1, C20, C11, C15
100 pF
Cap, Chip, 0603, 50V, 5%, NPO
various
C7, C10, C14
1000 pF
Cap, Chip, 0603, 50V, 5%, NPO
various
C9, C13
0.47 uF
Cap, Chip, 1206, 50V, 10%, X7R
various
C12
10 uF
Cap, Tantalum, 6032, 35V, 10%
various
R4
10 K
Resistor, Chip, 0603, 5%, 1/16W
various
R2
698
Resistor, Chip, 0603, 1%, 1/16W
various
R1
2.0 K
Resistor, Chip, 0805, 1%, 1/16W
various
R5
5.1
Resistor, Chip, 0603, 5%, 50V
various
FB2
0
Resistor, Chip, 0603, 5%, 50V
various
L3
2.4
Resistor, Chip, 0603, 1%, 50V
various
C2
12 pF
Cap, Chip, 0603, 50V, ± 0.1pF
AVX
C24
5.6 pF
Cap, Chip, 0603, 50V, ± 0.1pF
AVX
06035J5R6BSTR
C29
3.3 pF
Cap, Chip, 0603, 50V, ± 0.1pF
AVX
06035J3R3BSTR
L4
5.6 nH
Ind, Chip, 0603, ± 0.5nH
Toko
LL1608-FSL5N6S
FB1
Filter EMI Ferrite Bead
various
D1
TVS Diode Array, 5V, SOT23, 2Ch
On-Semiconductor
SM05T1G
D2
Diode TVS, 33V, 400W, 5% SMA
On-Semiconductor
1SMA33AT3G
1. PC Board Material: 0.0147” Rogers Ultralam 2000, 1 oz Cu,
r = 2.45, Microstrip line details: width = .042”, spacing = .050”
2. The primary RF microstrip line is 50
.
3. Do not exceed 5.5V on Vpd or damage to D1 will occur.
4. Do not exceed 33V on Vcc or damage to D2 will occur.
5. The center of L3 is placed at 210 mil from the AP603 (U1) device package.
6. The distance between edge of C2 and AP603 (U1) device package is 45 mil.
7. The distance between edge of C24 and AP603 (U1) device package is 294 mil.
8. The center of L4 is placed at 155 mil from AP603 (U1) device package.
9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
10. The main RF trace is cut at component L3 and L4 for this particular reference design.
Data Sheet: Rev A 07/02/11
-
5 of 20 -
Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network
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