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參數(shù)資料
| 型號： | APT40GP60JDF2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 86 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 214K |
| 代理商： | APT40GP60JDF2 |
050-7421
Rev
D
3-2004
TYPICAL PERFORMANCE CURVES
APT40GP60JDF2
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 99°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 40A
Forward Voltage
I
F = 80A
I
F = 40A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.4
3.0
1.8
APT40GP60JDF2
30
49
320
DYNAMICCHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT Reserves the right to change, without notice, the specifications and information contained herein.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-62
-65
-3-
-
113
-
411
-7-
-49
-
704
-22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE25a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
0.320
°C/W
0.515
°C/W
0.375
°C/W
0.00278 J/
°C
0.0421 J/
°C
0.242 J/
°C
Power
(watts)
Junction
temp(
°C)
RC MODEL
Case temperature(
°C)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT40GP60JDQ2 | 功能描述:IGBT 600V 86A 284W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT40GP60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT40GP60SG | 功能描述:IGBT 600V 100A 543W D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT40GP90B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT40GP90B2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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