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參數(shù)資料
| 型號： | ARF476FL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 183K |
| 代理商： | ARF476FL |
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ARF476FL
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Peak Output Power vs. Vdd and Duty Cycle
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100
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160
0
0.2
0.4
0.6
0.8
1
1.2
Drain Supply Voltage Vdd
Duty Cycle
Po Watts
Max
Notes:
The value of L1 must be adjusted as the supply voltage is
changed to maintain resonance in the output circuit. At
128MHz its value changes from approximately 40nH at
100V to 30nH at 150V.
With the 50 drain-to-drain load, the duty cycle above
100V must be reduced to insure power dissipation is
within the limits of the device. Maximum pulse length
should be 100mS or less. See transient thermal
impedance, figure 5.
128MHz Test amplifier
Po = 900W @150V
3ms pulse 10% Duty Cycle
J1
Vdd
+
-
L3
DUT
TL3
TL4
TL5
TL6
L2
L1
C1
C2
C3
C4
C5
C11
TL1
TL2
J2
T3
Vg1
Vg2
C6
C7
C8
C9
T2
T1
R1
R4
R2
R3
C1 25pF poly trimmer
C2 750pF ATC 700B
C3-4 2200pF NPO 500V chip
C5-10 10nF 500V chip
C11 1000uF 250V electroytic
L1 30nH 1.5t #18 enam .375" dia
L2 680nH 12t #24 enam .312" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2uH
R1-2 3.1 : 3 parallel 22 1W 2512 SMT
R3-4 2.2k 1/4W axial
T1 1:1 balun 50 coax on Fair-Rite 2843000102 core
T2 4:1 25 coax on 2843000102 Fair-Rite balun core
T3 1:1 coax balun RG-303 on 2861006802 Fair-Rite core
TL1-2 Printed line L= 0.75" w =.23"
TL3-6 Printed line L= 0.65" w =.23"
0.23" wide stripline on FR-4 board is ~ 30&!Zo
C10
1.500
.300
.200
.005 .040
ARF476FL
.175
.150
.100
.325
.325 +/- .010
.570
1.250
.320
.125dia
4 pls
.125R
4 pls
.080
1.000
HAZARDOUS MATERIAL WARNING
The white ceramic portion of the device between leads
and mounting surface is beryllium oxide, BeO. Beryllium
oxide dust is toxic when inhaled. Care must be taken dur-
ing handling and mounting to avoid damage to this area.
These devices must never be thrown away with general
industrial or domestic waste.
Thermal Considerations and Package Mounting:
The rated power dissipation is only available when the package
mounting surface is at 25°C and the junction temperature is 175°C
.
The thermal resistance between junctions and case mounting sur-
face is 0.16°C/W. When installed, an additional thermal impedance
of 0.15°C/W between the package base and the mounting surface
is typical. Insure that the mounting surface is smooth and flat.
Thermal joint compound must be used to reduce the effects of
small surface irregularities. Use the minimum amount necessary to
coat the surface. The heatsink should incorporate a copper heat
spreader to obtain best results.
The package design clamps the ceramic base to the heatsink. A
clamped joint maintains the required mounting pressure while al-
lowing for thermal expansion of both the base and the heat sink.
Four 4-40 (M3) screws provide the required mounting force. T = 6
in-lb (0.68 N-m).
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