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參數(shù)資料
| 型號： | ATF-501P8-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 184K |
| 代理商： | ATF-501P8-BLKG |
Agilent ATF-501P8 High Linearity
Enhancement Mode
[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC
[3] Package
Data Sheet
Description
Agilent Technologies’s ATF-
501P8 is a single-voltage high
linearity, low noise E-pHEMT
housed in an 8-lead JEDEC-
standard leadless plastic chip
carrier (LPCC[3]) package. The
device is ideal as a medium-
power amplifier. Its operating
frequency range is from 400 MHz
to 3.9 GHz.
The thermally efficient package
measures only 2mm x 2mm x
0.75mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85C. All devices
are 100% RF & DC tested.
Features
Single voltage operation
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product
specifications
Small package size: 2.0 x 2.0 x
0.75 mm3
Point MTTF > 300 years
[2]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Specifications
2 GHz; 4.5V, 280 mA (Typ.)
45.5 dBm Output IP3
29 dBm Output Power at 1dB gain
compression
1 dB Noise Figure
15 dB Gain
14.5 dB LFOM
[4]
65% PAE
23oC/W thermal resistance
Applications
Front-end LNA Q2 and Q3, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Note:
Package marking provides orientation and
identification:
“0P” = Device Code
“x” = Date code indicates the month of
manufacture.
Notes:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
0Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-501P8-TR1 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR1G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-BLK | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-501P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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