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參數(shù)資料
| 型號(hào)： | ATF-501P8-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8 |
| 文件頁數(shù)： | 12/22頁 |
| 文件大?。?/td> | 184K |
| 代理商： | ATF-501P8-BLKG |
2
ATF-501P8 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain–Source Voltage[2]
V7
V
GS
Gate–Source Voltage[2]
V
-5 to 0.8
V
GD
Gate Drain Voltage[2]
V
-5 to 1
I
DS
Drain Current[2]
A1
I
GS
Gate Current
mA
12
P
diss
Total Power Dissipation[3]
W
3.5
P
in max.
RF Input Power
dBm
30
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
θ
ch_b
Thermal Resistance[4]
°C/W
23
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
B is 25°C.
Derate 43.5 mW/
°C for T
B > 69.5°C.
4. Channel-to-board thermal resistance
measured using 150
°C Liquid Crystal
Measurement method.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical IV curve
(Vgs = 0.01V) per step.
Vds (V)
Ids
(mA)
06
1
2
3
4
5
800
700
600
500
400
300
200
100
0
Vgs=0.6V
Vgs=0.55V
Vgs=0.5V
Vgs=0.7V
Vgs=0.65V
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6]
Figure 2. P1dB.
P1dB (dBm)
27.5
30.5
28
28.5
29
29.5
30
120
100
80
60
40
20
0
Cpk=1.76
Stdev=0.3
+3 Std
–3 Std
Figure 3. PAE.
PAE (%)
45
85
55
65
75
120
100
80
60
40
20
0
Cpk=1.51
Stdev=3.38
+3 Std
–3 Std
Figure 4. Gain.
GAIN (dB)
13
17
14
15
16
100
80
60
40
20
0
Cpk=1.61
Stdev=0.33
+3 Std
–3 Std
Figure 5. OIP3.
OIP3 (dBm)
42
50
43
44
45
46
47
48
49
100
80
60
40
20
0
Cpk=1.1
Stdev=0.87
+3 Std
–3 Std
相關(guān)PDF資料 |
PDF描述 |
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| ATF-501P8-TR1 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR1G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-BLK | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-501P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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