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參數資料
| 型號： | ATF-501P8-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8 |
| 文件頁數： | 8/22頁 |
| 文件大?。?/td> | 184K |
| 代理商： | ATF-501P8-BLKG |
16
ATF-501P8 Typical Scattering Parameters,
VDS = 3.5V, IDS = 360 mA
Freq.
S11
S21
S12
S22
MSG/MAG K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
factor
0.1
0.919
-134.2
30.8
34.576
111.7
-39.2
0.011
29.6
0.722
-166.1
35.0
0.191
0.2
0.920
-157.3
25.3
18.445
99.7
-38.4
0.012
25.5
0.763
-174.1
31.9
0.336
0.3
0.921
-166.4
21.9
12.499
94.6
-37.7
0.013
26.7
0.771
-177.8
29.8
0.460
0.4
0.918
-171.4
19.4
9.372
91.5
-37.7
0.013
30.0
0.773
179.8
28.6
0.599
0.5
0.915
-174.0
17.8
7.792
88.8
-36.5
0.015
32.7
0.763
178.6
27.2
0.665
0.6
0.916
-176.7
16.3
6.537
86.6
-35.9
0.016
35.7
0.765
176.9
26.1
0.744
0.7
0.916
-178.9
15.0
5.596
84.7
-35.4
0.017
37.9
0.765
175.6
25.2
0.809
0.8
0.914
179.4
13.8
4.888
83.1
-34.9
0.018
40.0
0.764
174.9
24.3
0.871
0.9
0.919
178.1
12.8
4.370
81.1
-34.4
0.019
41.8
0.768
173.4
23.6
0.892
1
0.914
176.2
11.8
3.911
79.3
-34.0
0.020
43.0
0.762
172.2
22.9
0.963
1.5
0.912
170.2
8.3
2.596
72.2
-31.7
0.026
47.8
0.761
168.1
18.0
1.103
2
0.914
165.8
6.3
2.059
66.7
-30.2
0.031
49.2
0.766
163.8
15.9
1.142
2.5
0.910
164.7
5.8
1.940
65.6
-29.9
0.032
49.3
0.765
160.9
15.2
1.185
3
0.912
160.8
4.2
1.618
60.7
-28.6
0.037
49.0
0.761
156.6
13.6
1.210
4
0.913
154.4
2.3
1.296
52.9
-26.9
0.045
47.3
0.765
150.8
11.8
1.221
5
0.908
144.7
0.2
1.023
42.0
-24.4
0.060
43.2
0.756
143.0
9.4
1.236
6
0.903
134.5
-1.5
0.844
27.9
-22.5
0.075
34.8
0.745
141.1
7.6
1.233
7
0.906
125.5
-3.8
0.647
15.0
-21.9
0.080
25.7
0.676
129.9
5.3
1.392
8
0.904
115.1
-4.7
0.582
5.9
-20.6
0.093
20.3
0.670
113.3
4.1
1.430
9
0.902
105.3
-5.5
0.532
-6.4
-19.4
0.107
10.3
0.666
111.6
3.1
1.433
10
0.893
95.0
-5.8
0.513
-13.3
-18.8
0.115
7.5
0.710
100.7
2.7
1.416
11
0.881
84.1
-6.5
0.474
-22.0
-17.7
0.131
-1.9
0.756
88.2
1.9
1.388
12
0.873
73.6
-7.6
0.417
-32.9
-17.5
0.133
-8.5
0.746
84.9
0.5
1.577
13
0.847
63.9
-7.5
0.424
-40.6
-16.2
0.154
-13.9
0.772
75.7
0.2
1.507
14
0.844
55.4
-7.8
0.407
-52.7
-15.7
0.165
-22.0
0.802
66.3
0.1
1.407
15
0.827
47.4
-8.2
0.389
-63.7
-14.9
0.180
-29.7
0.793
63.2
-0.7
1.457
16
0.818
40.2
-8.9
0.357
-67.9
-14.6
0.187
-35.8
0.759
49.4
-1.9
1.637
17
0.799
32.9
-9.0
0.353
-81.4
-13.5
0.211
-43.1
0.786
36.5
-2.0
1.526
18
0.780
26.7
-9.3
0.344
-90.7
-12.5
0.236
-50.4
0.777
27.6
-2.7
1.549
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 61. MSG/MAG & |S21|
2 vs.
Frequency at 3.5V 360mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
S21
MSG
MAG
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-501P8-TR1 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR1G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-BLK | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-501P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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