參數(shù)資料
型號(hào)： BLF4G20LS-130
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 3 PIN
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 78K
代理商： BLF4G20LS-130
BLF4G20LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 June 2007
3 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq = 900 mA; PL = 130 W (CW); f = 1990 MHz.
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Max
Unit
Rth(j-case)
thermal resistance from junction
to case
Tcase =80 °C;
PL =50W
0.49
0.58
K/W
Table 6.
Characteristics
Tj = 25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID = 2.1 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 230 mA
2.5
2.9
3.5
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 900 mA
2.65
3.15
3.65
V
IDSS
drain leakage current
VGS =0V; VDS =28V
-
5
A
IDSX
drain cut-off current
VGS =VGS(th) +6 V;
VDS =10V
35
42
-
A
IGSS
gate leakage current
VGS = 15 V; VDS = 0 V
-
420
nA
gfs
forward transconductance
VDS =10V; ID = 7.5 A
-
11
-
S
RDS(on)
drain-source on-state
resistance
VGS =VGS(th) + 6 V;
ID = 7.5 A
-
0.065 -
Crs
feedback capacitance
VGS =0V; VDS =28V;
f= 1MHz
-3
-pF
Table 7.
Application information
Mode of operation: 2-tone (200 kHz tone spacing); f1 = 1930 MHz; f2 = 1990 MHz; VDS =28V;
IDq = 900 mA; Tcase =25 °C; unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(PEP) = 130 W
13
14.6
-
dB
RLin
input return loss
PL(PEP) = 130 W
-
10
7dB
ηD
drain efciency
PL(PEP) = 130 W
34.5
38.5
-
%
IMD3
third order intermodulation
distortion
PL(PEP) = 130 W
-
30
27
dBc
IMD5
fth order intermodulation distortion PL(PEP) = 130 W
-
39.5 35.5 dBc
IMD7
seventh order intermodulation
distortion
PL(PEP) = 130 W
-
58.5 54
dBc
相關(guān)PDF資料
PDF描述
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BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B
BLF4G20S-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22-100 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
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