參數(shù)資料
型號： BLF4G20LS-130
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 3 PIN
文件頁數(shù)： 9/11頁
文件大?。?/td> 78K
代理商： BLF4G20LS-130
BLF4G20LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 June 2007
7 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
8.
Test information
[1]
American Technical Ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (
ε
r = 3.5); thickness = 0.76 mm.
See Table 8 for list of components.
Fig 9.
Component layout for 1930 MHz to 1990 MHz production test circuit
001aag534
BLF4G20LS-130
input - PCS rev. 1
C3
C1
C2
BLF4G20LS-130
output - PCS rev. 1
C7
C10
C5
C9
W1
VDD
C6
C4
R1
Table 8.
List of components (see Figure 9)
Component
Description
Value
Dimensions
Remarks
C1, C3, C5, C7
chip capacitor
11 pF
C2, C9
tantalum capacitor
10
F
C4
chip capacitor
0.8 pF
C6
chip capacitor
0.1 pF
C8
American Technical Ceramics
(ATC) chip capacitor
1
F
1812X7R105KL2AB
C10
Philips electrolytic capacitor
220
F; 35 V
R1
Philips chip resistor
5.1
0603
W1
hand made wire
5 mm
相關(guān)PDF資料
PDF描述
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B
BLF4G20S-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22-100 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
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