參數(shù)資料
型號(hào)： BLF4G20LS-130
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 3 PIN
文件頁(yè)數(shù)： 7/11頁(yè)
文件大?。?/td> 78K
代理商： BLF4G20LS-130
BLF4G20LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 1 June 2007
5 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
7.3 Two-tone CW
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
Fig 2.
Two-tone CW power gain and drain efciency
as functions of load power; typical values
Fig 3.
Intermodulation distortion as a function of
average load power; typical values
VDS = 28 V; Tcase = 25 °C; f = 1990 MHz.
(1) IDq = 800 mA.
(2) IDq = 900 mA.
(3) IDq = 1000 mA.
(4) IDq = 1100 mA.
Fig 4.
Third order intermodulation distortion as function of average load power; typical values
PL (W)
0
100
80
40
60
20
001aag527
13
14
12
15
16
Gp
(dB)
ηD
(%)
11
20
30
10
40
50
0
Gp
ηD
PL(AV) (W)
0
100
80
40
60
20
001aag528
40
60
20
0
IMD
(dBc)
80
IMD3
IMD5
IMD7
PL(AV) (W)
0
100
80
40
60
20
001aag529
40
60
20
0
IMD3
(dBc)
80
(1)
(2)
(3)
(4)
相關(guān)PDF資料
PDF描述
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B
BLF4G20S-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22-100 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
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