參數(shù)資料
型號： BLF4G22-100
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 10/14頁
文件大小： 82K
代理商： BLF4G22-100
9397 750 14338
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
Two-tone measurement;
VDS =28V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
Two-tone measurement;
VDS =28V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
Fig 2.
Power gain as a function of peak envelope load
power; typical values
Fig 3.
Third order intermodulation distortion as a
function of peak envelope power; typical values
ton =8 s
toff =1ms
Fig 4.
Pulsed peak power capability; typical values
Fig 5.
t50% failures due to electromigration as a
function of junction temperature
001aac271
12
14
16
Gp
(dB)
10
PL(PEP) (W)
1103
102
10
(5)
(1)
(2)
(3)
(4)
PL(PEP) (W)
1103
102
10
001aac272
50
40
60
30
20
IMD3
(dBc)
70
(5)
(1)
(4)
(2)
(3)
PL (W)
0
200
160
80
120
40
001aac273
12
14
16
Gp
(dB)
10
P3dB = 161 W (= 51.3 dBm)
P1dB = 135 W (= 52.1 dBm)
001aac274
108
107
1010
109
1011
t50%
(hr)
106
Tj (°C)
100
260
220
140
180
相關(guān)PDF資料
PDF描述
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G22-100,112 制造商:NXP Semiconductors 功能描述:
BLF4G22-130 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-45,112 制造商:NXP Semiconductors 功能描述:
BLF4G22LS-130 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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